| PART |
Description |
Maker |
| TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM5964-80SL08 |
IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level
|
Toshiba Semiconductor
|
| TIM3742-30SL07 |
IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level
|
Toshiba Semiconductor
|
| AIDM9 AIDM17J AIDM150 AIDM125 AIDM13G AIDM175 AIDM |
2-Channel Differential Input 24-Bit No Latency Delta Sigma ADC; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C
.): 1Mbit/s; Current Transfer Ratio: 10% (min) (19% (min) for rank O) @I_F(IN)=16mA; Isolation voltage BVs @1minute (min) (V_rms): 5000; Safety Standard
24-Bit µPower No Latency Delta-Sigma ADC in SO-8; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
IF Wave Detection ICs; Application: Cordless Telephone; Operating Voltage: 1.8-5.5V; Package: SSOP16 (0.65); Comments: Mixer/ IF Amp/ Noise Detection
) Typ.: 4.5; Package Type: 2-11D1B
) Typ.: 2.5; Package Type: 2-11D1B
IC Output Photocouplers and Photorelays; Features: Buffer logic type(totem pole output); Package: MFSOP6; Surface Mount Type: Y; Number of Pins: 5
IC Output Photocouplers and Photorelays; Features: Inverter logic type(totem pole output); Package: SDIP6; Surface Mount Type: Y; Number of Pins: 6
Serial 12-Bit, 3.5Msps Sampling ADCs with Shutdown; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C
High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor
MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: PW-MOLD; R DS On (Ω): (max 0.12) (max 0.1); I_S (A): (max 5)
C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.4-3.8; P1dB (dBm): 42.5; G1dB (dB): 12.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 42.5; G1dB (dB): 8.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC
Logic IC 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 45.5; G1dB (dB): 8.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.2; Package Type: 2-16G1B 逻辑IC
C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 38.5; G1dB (dB): 10; Ids (A) Typ.: 1.6; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 3.8; Package Type: 2-11D1B 逻辑IC
MOSFETs - Nch VDSS=30V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (Ω): (max 0.02); I_S (A): (max 45)
|
Glenair, Inc.
Square D by Schneider Electric
|
| MAAP-008171-TR3000 MAAP-008171 MAAP-008171-001SMB |
High Power PHEMT 600 - 4000 MHz, 30 dBm Linear Pout, 10 watt P1dB
|
MACOM[Tyco Electronics]
|
| L622-DBC 32200018 32200023 |
L series PRTDs, type L 622 DBC are designed for large volume applications where longterm stability
|
List of Unclassifed Man...
|
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7785-8UL06 |
HIGH POWER P1dB=39.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7179-12UL |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
